US 12,474,642 B2
Metrology method for measuring an etched trench and associated metrology apparatus
Simon Gijsbert Josephus Mathijssen, Rosmalen (NL); and Arie Jeffrey Den Boef, Waalre (NL)
Assigned to ASML Netherlands B.V., Veldhoven (NL)
Appl. No. 18/255,310
Filed by ASML Netherlands B.V., Veldhoven (NL)
PCT Filed Dec. 8, 2021, PCT No. PCT/EP2021/084830
§ 371(c)(1), (2) Date May 31, 2023,
PCT Pub. No. WO2022/128688, PCT Pub. Date Jun. 23, 2022.
Claims priority of application No. 20215422 (EP), filed on Dec. 18, 2020.
Prior Publication US 2024/0012339 A1, Jan. 11, 2024
Int. Cl. G03F 7/00 (2006.01)
CPC G03F 7/70625 (2013.01) [G03F 7/70633 (2013.01); G03F 7/70683 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method comprising:
obtaining one or more images of an etched trench on a substrate formed by a lithographic manufacturing process, wherein each of the one or more images comprises a spatial representation of one or more parameters of scattered radiation as detected by a detector or camera following scattering and/or diffraction from the etched trench;
measuring homogeneity along a length of the etched trench on the one or more images to determine at least one symmetrical variation metric and at least one asymmetrical variation metric describing homogeneity of the etched trench;
determining a first correction for a first control parameter relating to a first process of the lithographic manufacturing process based on the at least one symmetrical variation metric; and
determining a second correction for a second control parameter relating to a second process of the lithographic manufacturing process based on the at least one asymmetrical variation metric,
wherein the first process is different than the second process.