	US 12,474,638 B2
	Underlayer for photoresist adhesion and dose reduction
Samantha S. H. Tan, Newark, CA (US); Jun Xue, Fremont, CA (US); Mary Anne Manumpil, Fremont, CA (US); Jengyi Yu, San Ramon, CA (US); and Da Li, Newark, CA (US)
Assigned to Lam Research Corporation, Fremont, CA (US)
Filed by Lam Research Corporation, Fremont, CA (US)
Filed on Apr. 5, 2024, as Appl. No. 18/628,111.
Application 18/628,111 is a continuation of application No. 17/452,365, filed on Oct. 26, 2021, granted, now 11,988,965.
Application 17/452,365 is a continuation of application No. 17/310,635, granted, now 11,314,168, issued on Apr. 26, 2022, previously published as PCT/US2021/012953, filed on Jan. 11, 2021.
Claims priority of provisional application 62/961,647, filed on Jan. 15, 2020.
Prior Publication US 2024/0255850 A1, Aug. 1, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G03F 7/09 (2006.01); C23C 16/04 (2006.01); G03F 1/22 (2012.01); G03F 7/00 (2006.01); G03F 7/16 (2006.01); G03F 7/20 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01)

CPC G03F 7/094 (2013.01) [C23C 16/047 (2013.01); G03F 1/22 (2013.01); G03F 7/091 (2013.01); G03F 7/167 (2013.01); G03F 7/2004 (2013.01); G03F 7/70033 (2013.01); H01L 21/02274 (2013.01); H01L 21/0274 (2013.01); H01L 21/0332 (2013.01)]

63 Claims

1. A method of making a patterning structure, comprising providing a substrate; and

depositing an underlayer comprising a hydronated carbon on the substrate by a vapor deposition process,

wherein the underlayer is configured to reduce a radiation dose for an effective EUV exposure of an EUV imaging layer containing an organo-metal-oxide network by releasing beta hydrogen atoms to the EUV imaging layer during the EUV exposure.

19. A method of making a patterning structure, comprising

providing a substrate; and

depositing an underlayer comprising a hydronated carbon on the substrate by a vapor deposition process,

wherein depositing the underlayer comprises applying an RF bias power between about 10 Watts and about 1,000 Watts at a frequency ranging between about 100 Hz and about 2,000 Hz, and

wherein a duty cycle ranges between about 1% and about 100%.

62. An apparatus for fabricating a patterning structure, comprising

a deposition chamber;

a showerhead;

a plasma power source;

a pedestal configured to receive and hold a substrate;

one or more heaters for controlling a temperature of the pedestal to greater than 0° C. and up to 300° C.; and

one or more gas inlets fluidly connected to one or more gas sources for providing one or more precursors for depositing an underlayer to the deposition chamber;

a controller configured to:

deposit the underlayer on the substrate,

wherein the underlayer comprises a hydronated carbon comprising 0-30% oxygen,

wherein the underlayer has a thickness of no more than 25 nm, and

wherein the underlayer has a density of about 0.7 to 2.9 g/cm³.