US 12,474,421 B2
Hall effect sensor with reduced JFET effect
Charles Parkhurst, Murphy, TX (US); Gabriel Eugenio De La Cruz Hernandez, Richardson, TX (US); Keith Ryan Green, Prosper, TX (US); Dimitar Trifonov, Vail, AZ (US); and Chao-Hsuian Tsay, Tucson, AZ (US)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by Texas Instruments Incorporated, Dallas, TX (US)
Filed on Aug. 13, 2021, as Appl. No. 17/402,019.
Prior Publication US 2023/0048022 A1, Feb. 16, 2023
Int. Cl. G01R 33/07 (2006.01); H10N 52/00 (2023.01); H10N 52/80 (2023.01)
CPC G01R 33/072 (2013.01) [H10N 52/101 (2023.02); H10N 52/80 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A Hall effect sensor, comprising:
a Hall element disposed at a surface of a semiconductor body and comprising:
a first doped region of a first conductivity type;
a second doped region of a second conductivity type, disposed under and abutting the first doped region, and electrically isolated within the semiconductor body;
first, second, third, and fourth terminals in electrical contact with the first doped region at separate locations of the surface;
a fifth terminal in electrical contact with the second doped region;
a first current source coupled to the first terminal of the Hall element;
common mode feedback regulation circuitry, having an input coupled to the second and fourth terminals of the Hall element, and an output coupled to the third terminal and a ground node; and
output circuitry coupled to the second and fourth terminals of the Hall element;
wherein the third terminal of the Hall element is coupled to the fifth terminal.