US 12,474,294 B2
Field-effect transistor device or sensor for sensing ions, molecules or biomarkers in a fluid
Junrui Zhang, Ecublens (CH); Francesco Bellando, Renens (CH); Erick Garcia Cordero, Lausanne (CH); and Mihai Adrian Ionescu, Ecublens (CH)
Assigned to ECOLE POLYTECHNIQUE FÉDÉRALE DE LAUSANNE (EPFL), Lausanne (CH)
Appl. No. 17/254,556
Filed by ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL), Lausanne (CH)
PCT Filed Jun. 21, 2019, PCT No. PCT/IB2019/055238
§ 371(c)(1), (2) Date Dec. 21, 2020,
PCT Pub. No. WO2019/244113, PCT Pub. Date Dec. 26, 2019.
Claims priority of provisional application 62/688,413, filed on Jun. 22, 2018.
Prior Publication US 2021/0270770 A1, Sep. 2, 2021
Int. Cl. G01N 27/414 (2006.01); B01L 3/00 (2006.01)
CPC G01N 27/4145 (2013.01) [B01L 3/502715 (2013.01); B01L 3/50273 (2013.01); B01L 2300/0636 (2013.01); B01L 2400/0406 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A Field-Effect Transistor (FET) device configured to sense at least one of ions, molecules and biomarkers in a liquid, the Field-Effect transistor device comprising:
at least one substrate;
at least one drain region;
at least one source region;
at least one channel region extending between the at least one drain region and the at least one source region;
at least a first gate connected to the channel region to control a current in the channel region;
at least one stack comprising at least one layer comprising metal and at least one via layer;
at least one second gate connected to the at least one first gate by the at least one stack, the at least one second gate permitting sensing of at least one of ions, molecules, and biomarkers;
at least one microfluidic channel connected to the at least one second gate, the at least one microfluidic channel comprising at least one floor and at least one side wall extending from the at least one floor; and
at least one superposed layer surrounding the at least one layer comprising metal and the at least one via layer of the at least one stack and surrounding the at least one second gate, the at least one superposed layer extending from the at least one stack and the at least one second gate to form the at least one microfluidic channel,
the at least one microfluidic channel extending in a plane parallel to a plane defined by the at least one substrate to define a microfluidic channel network to distribute the liquid to different locations on the Field-Effect Transistor (FET) device,
wherein the at least one microfluidic channel includes at least one entrance aperture to receive the liquid via capillary action, the at least one entrance aperture being in fluid communication with the microfluidic channel network to distribute the liquid through the microfluidic channel network via capillary action, and
wherein the at least one microfluidic channel includes at least one exit aperture to evacuate the liquid, the at least one exit aperture being in fluid communication with the microfluidic channel network to receive the liquid from the microfluidic channel network and the at least one exit aperture being in fluid communication with the at least one entrance aperture to receive the liquid from the at least one entrance aperture.