US 12,473,661 B2
Large diameter silicon carbide wafers
Yuri Khlebnikov, Raleigh, NC (US); Varad R. Sakhalkar, Morrisville, NC (US); Caleb A. Kent, Durham, NC (US); Valeri F. Tsvetkov, Durham, NC (US); Michael J. Paisley, Raleigh, NC (US); Oleksandr Kramarenko, Durham, NC (US); Matthew David Conrad, Durham, NC (US); Eugene Deyneka, Raleigh, NC (US); Steven Griffiths, Morrisville, NC (US); Simon Bubel, Carrboro, NC (US); Adrian R. Powell, Cary, NC (US); Robert Tyler Leonard, Raleigh, NC (US); Elif Balkas, Cary, NC (US); and Jeffrey C. Seaman, Louisburg, NC (US)
Assigned to WOLFSPEED, INC., Durham, NC (US)
Filed by Wolfspeed, Inc., Durham, NC (US)
Filed on Jul. 3, 2024, as Appl. No. 18/762,896.
Application 18/762,896 is a continuation of application No. 17/124,810, filed on Dec. 17, 2020, granted, now 12,054,850.
Claims priority of provisional application 62/954,082, filed on Dec. 27, 2019.
Prior Publication US 2024/0352622 A1, Oct. 24, 2024
Int. Cl. H01L 21/04 (2006.01); C30B 23/02 (2006.01); C30B 23/06 (2006.01); C30B 29/36 (2006.01); C30B 31/22 (2006.01); C30B 33/02 (2006.01)
CPC C30B 29/36 (2013.01) [C30B 23/02 (2013.01); C30B 23/063 (2013.01); C30B 23/066 (2013.01); C30B 31/22 (2013.01); C30B 33/02 (2013.01); H01L 21/0475 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A silicon carbide (SiC) wafer comprising:
a diameter of at least 195 millimeters (mm);
a thickness in a range from 300 microns (μm) to 1000 μm; and
a total thickness variation (TTV) of less than 7 μm, wherein the TTV is defined as difference between a maximum elevation and a minimum elevation of a front surface of the wafer relative to a back surface of the wafer.