US 12,473,659 B2
Conformal yttrium oxide coating
Tony S. Kaushal, Campbell, CA (US); and Michelle Lacomb Novak, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 17, 2021, as Appl. No. 17/350,553.
Prior Publication US 2022/0403531 A1, Dec. 22, 2022
Int. Cl. C25D 11/18 (2006.01); C23C 28/00 (2006.01); C25D 11/02 (2006.01)
CPC C25D 11/18 (2013.01) [C23C 28/00 (2013.01); C25D 11/026 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of coating a semiconductor component substrate, the method comprising:
submerging the semiconductor component substrate in an alkaline electrolyte, wherein the alkaline electrolyte comprises yttrium;
igniting a plasma at a surface of the semiconductor component substrate for a period of time less than or about 12 hours; and
forming a yttrium-containing oxide on the semiconductor component substrate, wherein a surface of the yttrium-containing oxide is characterized by a yttrium incorporation of greater than or about 10 at. %, and wherein the yttrium-containing oxide formed by submerging the semiconductor component substrate in the alkaline electrolyte and igniting a plasma at a surface of the semiconductor component substrate comprises pores characterized by an average pore diameter of less than or about 100 nm.