US 12,473,645 B2
Method for forming thin film
Changbong Yeon, Seongnam-si (KR); Jaesun Jung, Seongnam-si (KR); Hyeran Byun, Seongnam-si (KR); Taeho Song, Seongnam-si (KR); Sojung Kim, Seongnam-si (KR); and Seokjong Lee, Seongnam-si (KR)
Assigned to SOULBRAIN CO., LTD., Gyeonggi-do (KR)
Filed by SOULBRAIN CO., LTD., Seongnam-si (KR)
Filed on May 20, 2022, as Appl. No. 17/749,153.
Application 17/749,153 is a division of application No. 16/734,423, filed on Jan. 6, 2020, granted, now 12,252,788.
Claims priority of application No. 10-2019-0118417 (KR), filed on Sep. 25, 2019; and application No. 10-2019-0137838 (KR), filed on Oct. 31, 2019.
Prior Publication US 2022/0275511 A1, Sep. 1, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/40 (2006.01); C23C 16/30 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01)
CPC C23C 16/45544 (2013.01) [C23C 16/303 (2013.01); C23C 16/34 (2013.01); C23C 16/405 (2013.01); C23C 16/45534 (2013.01); H01L 21/28568 (2013.01); H01L 21/76841 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method for forming a thin film comprising steps of:
i) adsorbing a growth inhibitor for forming a thin film on a surface of a substrate; and ii) adsorbing a metal film precursor, metal oxide film precursor, metal nitride film precursor or silicon nitride film precursor on a surface of a substrate on which the growth inhibitor is adsorbed, and the metal is zirconium,
wherein the growth inhibitor is one or more selected from the group consisting of 1,1-dichloroethane, 1,2-dichloroethane, dichloromethane, 2-chloropropane, 1-chloropropane, 1,2-dichloropropane, 1,3-dichloropropane, 2,2-dichloropropane, 1-chloropentane, 2-chloropentane, 3-chloropentane, chlorocyclopentane, n-butylchloride, tert-butyl chloride, sec-butyl chloride, isobutyl chloride, 1,2-dichlorobenzene, 1,4-dichlorobenzene, trichloropropane, 2-chloro-2-methylbutane, and 2-methyl-1-pentene, and
wherein in the step of i) adsorbing the growth inhibitor for forming a thin film on the surface of the substrate, a feeding amount of the growth inhibitor is 1-25 mg/cycle.