US 12,473,631 B2
Simultaneous selective deposition of two different materials on two different surfaces
Michael Eugene Givens, Oud-Heverlee (BE); Eva Tois, Helsinki (FI); Suvi Haukka, Helsinki (FI); Daria Nevstrueva, Helsinki (FI); and Charles Dezelah, Helsinki (FI)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP HOLDING B.V., Almere (NL)
Filed on Feb. 16, 2023, as Appl. No. 18/170,286.
Application 18/170,286 is a continuation of application No. 17/216,260, filed on Mar. 29, 2021, granted, now 11,608,557.
Claims priority of provisional application 63/001,898, filed on Mar. 30, 2020.
Prior Publication US 2023/0203644 A1, Jun. 29, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C23C 16/04 (2006.01); C23C 16/02 (2006.01); C23C 16/20 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); C23C 28/00 (2006.01)
CPC C23C 16/04 (2013.01) [C23C 16/0281 (2013.01); C23C 16/20 (2013.01); C23C 16/45534 (2013.01); C23C 16/56 (2013.01); C23C 28/341 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A method of selectively depositing different materials on a first surface and a second different surface of a substrate, the method comprising one or more first deposition cycles comprising:
exposing the first and the second surfaces of the substrate to a passivation agent such that a passivation layer is selectively formed on the first surface relative to the second surface;
exposing the first surface, having the formed passivation layer, and the second surfaces of the substrate to a first reactant such that a first element from the first reactant is selectively deposited on the second surface relative to the first surface; and
exposing the first surface, having the passivation layer, and the second surface, having the deposited first element, s of the substrate to a second reactant, wherein, such that a first material selectively forms on the first surface simultaneously with a second material selectively forming on the second surface, is selectively formed on the first surface and a second different material is selectively formed on the second surface simultaneously in the one or more first deposition cycles, and wherein one or more of an etch rate, a density, a conductivity, and a refractive index of the first material differs from that of the second material by at least about 5%.