US 12,473,309 B2
Organometallic compound and method of manufacturing integrated circuit using the same
Seungmin Ryu, Hwaseong-si (KR); Younsoo Kim, Yongin-si (KR); Gyuhee Park, Hwaseong-si (KR); Younjoung Cho, Hwaseong-si (KR); Yutaro Aoki, Tokyo (JP); Wakana Fuse, Tokyo (JP); Kazuki Harano, Tokyo (JP); Takanori Koide, Tokyo (JP); Yoshiki Manabe, Tokyo (JP); Kazuya Saito, Tokyo (JP); and Hiroyuki Uchiuzou, Tokyo (JP)
Assigned to SAMSUNG ELECTRONICS CO., LTD.; and ADEKA CORPORATION, Tokyo (JP)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jun. 14, 2021, as Appl. No. 17/346,400.
Claims priority of application No. 10-2020-0073250 (KR), filed on Jun. 16, 2020; and application No. 10-2021-0021385 (KR), filed on Feb. 17, 2021.
Prior Publication US 2021/0388010 A1, Dec. 16, 2021
Int. Cl. C07F 9/00 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); H10K 71/16 (2023.01); H10K 85/30 (2023.01)
CPC C07F 9/005 (2013.01) [C23C 16/34 (2013.01); C23C 16/45536 (2013.01); C23C 16/45557 (2013.01); H10K 71/166 (2023.02); H10K 85/30 (2023.02)] 17 Claims
 
1. An organometallic compound represented by Formula (I),

OG Complex Work Unit Chemistry
wherein, in Formula (I), M is a tantalum atom; or a vanadium atom, R1 is a C1-C5 straight-chain alkyl group or a C3-C5 branched alkyl group, R2 and R3 are each independently a C1-C8 straight-chain alkyl group or a C3-C8 branched alkyl group, at least one of R2 and R3 being substituted with at least six fluorine atom, R4 is a C1-C10 straight-chain alkyl group or a C3-C10 branched alkyl group, and n is an integer of 0 to 5, and
wherein the organometallic compound is a liquid at a temperature of about 20° C. at an atmospheric pressure.