| CPC C01B 32/963 (2017.08) [C01P 2002/08 (2013.01); C01P 2004/61 (2013.01); C01P 2004/62 (2013.01); C01P 2006/12 (2013.01); C01P 2006/14 (2013.01); C01P 2006/16 (2013.01); C01P 2006/40 (2013.01)] | 22 Claims |
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1. A process for preparing composite particles, the process comprising the steps of:
(a) providing a plurality of porous particles in a reaction zone, the reaction zone having internal surfaces;
(b) contacting the plurality of particles in the reaction zone with a gas comprising at least 25 vol % of a silicon-containing precursor at a temperature effective to cause deposition of silicon in the pores of the porous particles;
wherein ΔT≤+90° C. is maintained during step (b), wherein ΔT represents the temperature differential between the maximum temperature of the internal surfaces of the reaction zone and the simultaneous minimum temperature within the plurality of porous particles, wherein a positive value of ΔT indicates that the maximum temperature of the internal surfaces of the reaction zone is higher than the minimum temperature within the plurality of particles;
(c) discontinuing deposition of the silicon to form intermediate particles; and
(d) contacting the intermediate particles from step (c) with a gas comprising a silicon-containing precursor, at a temperature effective to cause further deposition of the silicon in the pores of the intermediate particles;
wherein ΔT≤+90° C. is maintained during step (d).
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