US 12,473,198 B2
Method for preparing the remainder of a donor substrate, substrate produced by said method, and use of such a substrate
Charlotte Drazek, Grenoble (FR); and Djamel Belhachemi, Saint Martin d'heres (FR)
Assigned to Soitec, Bernin (FR)
Filed by Soitec, Bernin (FR)
Filed on Nov. 14, 2022, as Appl. No. 18/055,040.
Application 18/055,040 is a continuation of application No. 16/770,013, granted, now 11,542,155, previously published as PCT/FR2018/052938, filed on Nov. 21, 2018.
Claims priority of application No. 1761674 (FR), filed on Dec. 5, 2017.
Prior Publication US 2023/0073003 A1, Mar. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/02 (2006.01); B81C 1/00 (2006.01); H01L 21/762 (2006.01)
CPC B81C 1/00357 (2013.01) [H01L 21/02021 (2013.01); H01L 21/76254 (2013.01); H01L 21/76259 (2013.01); B81C 2201/0192 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for preparing a remainder of a donor substrate for reuse, a layer having been removed from the donor substrate by delamination in a plane weakened by ion implantation, the remainder having an annular step corresponding to a non-removed part of the donor substrate on a main face of the remainder of the donor substrate, the method comprising:
depositing a smoothing oxide on the main face of the remainder of the donor substrate and completely filling an inner space defined by the annular step with the smoothing oxide, and covering an entirety of the annular step with the smoothing oxide; and
densifying the smoothing oxide by applying a heat treatment to the smoothing oxide.