US 12,471,807 B1
Biometric sensor comprising oxide semiconductor, biometric sensor on display, and methods of making and using the same
Tian Xiao, Everett, WA (US); and King Hong Kwan, Bellevue, WA (US)
Assigned to Next Biometrics Group ASA, Oslo (NO)
Filed by Next Biometrics Group ASA, Oslo (NO)
Filed on May 12, 2025, as Appl. No. 19/205,451.
Claims priority of provisional application 63/647,208, filed on May 14, 2024.
Int. Cl. A61B 5/1172 (2016.01); G01K 7/01 (2006.01); G06V 40/13 (2022.01); G06V 40/40 (2022.01)
CPC A61B 5/1172 (2013.01) [G01K 7/015 (2013.01); G06V 40/13 (2022.01); G06V 40/40 (2022.01); A61B 2562/0271 (2013.01)] 24 Claims
OG exemplary drawing
 
1. A sensor for biometric sensing, comprising:
a pixel matrix having a plurality of pixels, the plurality of pixels configured to measure a biometric pattern;
a micro temperature sensor and a micro heater in each pixel, and the micro temperature sensor comprising an oxide semiconductor material,
wherein the plurality of pixels comprise thermal sensing pixels configured to operate based on at least an active thermal sensing principle, in which a low power heat pulse is applied and a response corresponding to a biometric pattern is measured,
wherein the sensor further comprises capacitive touch sensing elements, and the capacitive touch sensing elements are active matrix self-capacitive touch sensors used in combination with active thermal sensing to enhance anti-spoofing performance.