	US RE50,208 E1
	Buffer circuit, semiconductor integrated circuit device, oscillator, electronic apparatus, and base station
Kenji Hayashi, Chino (JP)
Assigned to SEIKO EPSON CORPORATION, Tokyo (JP)
Filed by SEIKO EPSON CORPORATION, Tokyo (JP)
Filed on Sep. 9, 2021, as Appl. No. 17/470,755.
Application 17/470,755 is a reissue of application No. 15/332,778, filed on Oct. 24, 2016, granted, now 10,476,493, issued on Nov. 12, 2019.
Claims priority of application No. 2015-214461 (JP), filed on Oct. 30, 2015.
Int. Cl. H03K 17/06 (2006.01); H01L 23/34 (2006.01); H01L 23/528 (2006.01); H01L 27/02 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H03B 5/02 (2006.01); H03B 5/36 (2006.01); H03K 19/007 (2006.01)

CPC H03K 17/063 (2013.01) [H01L 23/34 (2013.01); H01L 23/5283 (2013.01); H01L 29/4238 (2013.01); H01L 29/7803 (2013.01); H01L 29/7813 (2013.01); H03B 5/02 (2013.01); H03B 5/364 (2013.01); H03K 19/0075 (2013.01); H01L 23/528 (2013.01); H01L 27/0207 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H03B 2200/0034 (2013.01)]

14 Claims

1. A buffer circuit comprising:

a first MOSFET comprising a first source electrode, a first gate electrode, and a ~~first~~ [ shared ] drain electrode;

a second MOSFET, which comprises a second source electrode, a second gate electrode, and a second drain electrode, and is same in polarity as the first MOSFET, the second gate electrode being electrically connected to the first gate electrode;

a third MOSFET comprising a third source electrode, a third gate electrode, and the ~~first~~ [ shared ] drain electrode; ~~and~~

a first switch connected to the ~~third~~ [ first ] gate electrode and the ~~first~~ [ second ] gate electrode [ ; and

a second switch connected to the third gate electrode,

wherein the first MOSFET and the third MOSFET are same in polarity as each other] .