US 12,144,202 B2
Method of manufacturing display device
Yuko Matsumoto, Tokyo (JP); and Kaichi Fukuda, Tokyo (JP)
Assigned to JAPAN DISPLAY INC., Tokyo (JP)
Filed by Japan Display Inc., Tokyo (JP)
Filed on Aug. 2, 2023, as Appl. No. 18/363,759.
Application 18/363,759 is a continuation of application No. 18/185,633, filed on Mar. 17, 2023.
Claims priority of application No. 2022-042742 (JP), filed on Mar. 17, 2022.
Prior Publication US 2023/0389356 A1, Nov. 30, 2023
Int. Cl. H10K 59/12 (2023.01); H10K 59/122 (2023.01); H10K 59/35 (2023.01); H10K 59/80 (2023.01)
CPC H10K 59/1201 (2023.02) [H10K 59/122 (2023.02); H10K 59/352 (2023.02); H10K 59/873 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A method of manufacturing a display device, the method comprising:
preparing a processing substrate by forming a first lower electrode of a first sub-pixel, a second lower electrode of a second sub-pixel, and a third lower electrode of a third sub-pixel, by forming a rib having a first aperture overlapping the first lower electrode, a second aperture overlapping the second lower electrode, and a third aperture overlapping the third lower electrode, and by forming a partition including a lower portion located on the rib and an upper portion located on the lower portion and protruding from a side surface of the lower portion;
after the preparing the processing substrate, forming a first thin film over the first sub-pixel, the second sub-pixel, and the third sub-pixel, the first thin film including a first light emitting layer above the first lower electrode, the second lower electrode and the third lower electrode, and the first thin film including a first sealing layer above the first light emitting layer;
after the forming the first thin film, forming a first resist on the first sealing layer, the first resist exposing the first thin film over the second sub-pixel and the third sub-pixel and covering the first thin film over the first sub-pixel;
after the forming the first resist, removing the first thin film over the second sub-pixel and the third sub-pixel by etching using the first resist as a mask, remaining the first thin film over the first sub-pixel, exposing the second lower electrode from the second aperture, and exposing the third lower electrode from the third aperture;
after the removing the first thin film, removing the first resist;
after the removing the first resist, forming a second thin film over the first sub-pixel, the second sub-pixel, and the third sub-pixel, the second thin film including a second light emitting layer above the first lower electrode, the second lower electrode and the third lower electrode, and the second thin film including a second sealing layer above the second light emitting layer;
after the forming the second thin film, forming a second resist on the second sealing layer, the second resist exposing the second thin film over the first sub-pixel and the third sub-pixel and covering the second thin film over the second sub-pixel;
after the forming the second resist, removing the second thin film over the first sub-pixel and the third sub-pixel by etching using the second resist as a mask, remaining the second thin film over the second sub-pixel, and exposing the third lower electrode from the third aperture; and
after the removing the second thin film, removing the second resist, wherein
an area of the first aperture is larger than an area of the second aperture.