US 12,144,185 B2
Method of making ovonic threshold switch selectors using microwave annealing
Oleksandr Mosendz, Campbell, CA (US); Hyunsang Hwang, Pohang (KR); Jangseop Lee, Pohang (KR); and Raghuveer S. Makala, Campbell, CA (US)
Assigned to Sandisk Technologies, Inc., Milpitas, CA (US); and POHANG UNIVERSITY OF SCIENCE AND TECHNOLOGY, Pohang (KR)
Filed by WESTERN DIGITAL TECHNOLOGIES, INC., San Jose, CA (US); and POHANG UNIVERSITY OF SCIENCE AND TECHNOLOGY, Pohang (KR)
Filed on Feb. 2, 2022, as Appl. No. 17/591,200.
Prior Publication US 2023/0247843 A1, Aug. 3, 2023
Int. Cl. H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC H10B 63/24 (2023.02) [H10N 70/231 (2023.02); H10N 70/823 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a first electrode layer over a substrate;
forming an ovonic threshold switch (OTS) material layer over the first electrode layer;
microwave annealing the OTS material layer; and
forming a second electrode layer over the OTS material layer.