US 12,144,184 B2
Tunnel junction selector MRAM
Mauricio Manfrini, Zhubei (TW); and Hon-Sum Philip Wong, Stanford, CA (US)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 3, 2023, as Appl. No. 18/346,661.
Application 18/346,661 is a continuation of application No. 17/562,680, filed on Dec. 27, 2021, granted, now 11,737,284.
Application 17/562,680 is a continuation of application No. 16/589,255, filed on Oct. 1, 2019, granted, now 11,211,426, issued on Dec. 28, 2021.
Prior Publication US 2023/0345737 A1, Oct. 26, 2023
Int. Cl. H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01)
CPC H10B 61/20 (2023.02) [H10N 50/01 (2023.02); H10N 50/80 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
depositing and patterning a first material to form a magnetic tunnel junction structure over a bottom electrode;
depositing and planarizing a first dielectric material with the magnetic tunnel junction structure; and
after the depositing and planarizing, forming a tunnel junction selector directly over and in electrical connection with the magnetic tunnel junction structure, the tunnel junction selector comprising MgO.