US 12,143,741 B2
Solid-state imaging device, and electronic apparatus
Yuji Uesugi, Kanagawa (JP); Fumihiko Koga, Kanagawa (JP); and Keisuke Hatano, Kanagawa (JP)
Assigned to SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed on Jul. 24, 2023, as Appl. No. 18/357,512.
Application 18/357,512 is a continuation of application No. 17/656,584, filed on Mar. 25, 2022, granted, now 11,765,483.
Application 17/656,584 is a continuation of application No. 16/491,377, granted, now 11,310,452, issued on Apr. 19, 2022, previously published as PCT/JP2018/012713, filed on Mar. 28, 2018.
Claims priority of application No. 2017-078182 (JP), filed on Apr. 11, 2017.
Prior Publication US 2023/0370742 A1, Nov. 16, 2023
Int. Cl. H04N 25/76 (2023.01); H01L 27/146 (2006.01)
CPC H04N 25/76 (2023.01) [H01L 27/14643 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A light detecting device, comprising:
a semiconductor layer;
a first electrode and a third electrode on the semiconductor layer;
a photoelectric conversion layer on the first electrode and the third electrode;
a second electrode on the photoelectric conversion layer;
an insulation film between the third electrode and the photoelectric conversion layer; and
a control circuit configured to:
control a voltage of the third electrode based on a temperature of the light detecting device, and
control discharge of charges or transfer of charges from the third electrode based on the voltage of the third electrode.