| CPC H04N 25/47 (2023.01) [H04N 25/42 (2023.01); H04N 25/77 (2023.01); H04N 25/78 (2023.01); H01L 27/14634 (2013.01)] | 19 Claims |

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1. A solid-state imaging device comprising:
a plurality of detection pixels that each output a luminance change of incident light;
a detection circuit that outputs an event signal based on the luminance change output from each of the detection pixels; and
a first common line connecting the plurality of detection pixels to each other,
wherein each of the detection pixels includes:
a photoelectric conversion element;
a logarithmic conversion circuit that converts a photocurrent flowing out of the photoelectric conversion element into a voltage signal corresponding to a logarithmic value of the photocurrent;
a first circuit that outputs a luminance change of incident light incident on the photoelectric conversion element based on the voltage signal output from the logarithmic conversion circuit;
a first transistor connected between the photoelectric conversion element and the logarithmic conversion circuit;
a second transistor connected between the photoelectric conversion element and the first common line;
a second common line connecting the plurality of detection pixels to each other;
a plurality of third transistors connected between the photoelectric conversion element in each of the detection pixels and the second common line; and
a readout circuit that is connected to the second common line and generates a pixel signal having a voltage value corresponding to charge accumulated in the photoelectric conversion element, wherein
the detection circuit includes a second circuit that outputs the event signal based on the luminance change output from each of the detection pixels.
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