US 12,143,101 B2
Radio frequency switch
Byeonghak Jo, Suwon-si (KR); Wonsun Hwang, Suwon-si (KR); Shinhaeng Heo, Suwon-si (KR); and Dongil Kang, Suwon-si (KR)
Assigned to Samsung Electro-Mechanics Co., Ltd., Suwon-si (KR)
Filed by SAMSUNG ELECTRO-MECHANICS CO., LTD., Suwon-si (KR)
Filed on Mar. 9, 2023, as Appl. No. 18/181,165.
Claims priority of application No. 10-2022-0164438 (KR), filed on Nov. 30, 2022.
Prior Publication US 2023/0318597 A1, Oct. 5, 2023
Int. Cl. H03K 17/68 (2006.01); H03K 17/06 (2006.01); H03K 17/10 (2006.01); H03K 17/687 (2006.01)
CPC H03K 17/6871 (2013.01) [H03K 17/063 (2013.01); H03K 17/102 (2013.01)] 27 Claims
OG exemplary drawing
 
1. A radio frequency (RF) switch comprising:
a switch transistor; and
a bias transistor comprising a body terminal and a first terminal connected to each other in a diode-connected configuration, and configured to provide a first current to a body terminal of the switch transistor corresponding to a voltage applied to a control terminal of the switch transistor.