US 12,143,092 B2
Transversely-excited film bulk acoustic resonators and filters with trap-rich layer
Patrick Turner, San Bruno, CA (US)
Assigned to MURATA MANUFACTURING CO., LTD., Nagaokakyo (JP)
Filed by Murata Manufacturing Co., Ltd., Nagaokakyo (JP)
Filed on Sep. 29, 2022, as Appl. No. 17/956,807.
Application 17/956,807 is a continuation of application No. 17/692,083, filed on Mar. 10, 2022.
Application 17/692,083 is a continuation of application No. 16/989,710, filed on Aug. 10, 2020, granted, now 11,323,089, issued on May 3, 2022.
Application 16/989,710 is a continuation in part of application No. 16/438,121, filed on Jun. 11, 2019, granted, now 10,756,697, issued on Aug. 25, 2020.
Application 16/438,121 is a continuation in part of application No. 16/230,443, filed on Dec. 21, 2018, granted, now 10,491,192, issued on Nov. 26, 2019.
Claims priority of provisional application 62/951,452, filed on Dec. 20, 2019.
Claims priority of provisional application 62/753,815, filed on Oct. 31, 2018.
Claims priority of provisional application 62/748,883, filed on Oct. 22, 2018.
Claims priority of provisional application 62/741,702, filed on Oct. 5, 2018.
Claims priority of provisional application 62/701,363, filed on Jul. 20, 2018.
Claims priority of provisional application 62/685,825, filed on Jun. 15, 2018.
Prior Publication US 2023/0027140 A1, Jan. 26, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H03H 9/02 (2006.01); H03H 9/205 (2006.01); H03H 9/54 (2006.01)
CPC H03H 9/02228 (2013.01) [H03H 9/02015 (2013.01); H03H 9/205 (2013.01); H03H 9/54 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An acoustic resonator device comprising:
a substrate comprising:
a silicon base having a surface, and
a trap-rich region adjacent to the surface;
a dielectric layer adjacent to the trap rich region;
a piezoelectric layer having front and back surfaces, the back surface facing the dielectric layer, the piezoelectric layer including a diaphragm that is over a cavity; and
an interdigital transducer (IDT) on the front surface of the piezoelectric layer such that interleaved fingers of the IDT are on the diaphragm.