US 12,143,077 B2
Power amplifier modules including semiconductor resistor and tantalum nitride terminated through wafer via
Peter J. Zampardi, Jr., Newbury Park, CA (US); Hongxiao Shao, Thousand Oaks, CA (US); Tin Myint Ko, Newbury Park, CA (US); Matthew Thomas Ozalas, Novato, CA (US); Hong Shen, Palo Alto, CA (US); Mehran Janani, Oak Park, CA (US); Jens Albrecht Riege, Ojai, CA (US); Hsiang-Chih Sun, Thousand Oaks, CA (US); David Steven Ripley, Cedar Rapids, IA (US); and Philip John Lehtola, Cedar Rapids, IA (US)
Assigned to Skyworks Solutions, Inc., Irvine, CA (US)
Filed by Skyworks Solutions, Inc., Irvine, CA (US)
Filed on Aug. 17, 2022, as Appl. No. 17/820,497.
Application 17/820,497 is a division of application No. 16/943,336, filed on Jul. 30, 2020, granted, now 11,451,199.
Application 16/943,336 is a division of application No. 16/104,114, filed on Aug. 16, 2018, granted, now 10,771,024, issued on Sep. 8, 2020.
Application 16/104,114 is a division of application No. 15/482,321, filed on Apr. 7, 2017, granted, now 10,090,812, issued on Oct. 2, 2018.
Application 15/482,321 is a division of application No. 14/686,559, filed on Apr. 14, 2015, granted, now 9,660,584, issued on May 23, 2017.
Application 14/686,559 is a division of application No. 13/917,384, filed on Jun. 13, 2013, granted, now 9,041,472, issued on May 26, 2015.
Claims priority of provisional application 61/659,848, filed on Jun. 14, 2012.
Prior Publication US 2022/0393653 A1, Dec. 8, 2022
Int. Cl. H01L 27/082 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/66 (2006.01); H01L 21/768 (2006.01); H01L 21/78 (2006.01); H01L 21/8249 (2006.01); H01L 21/8252 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/498 (2006.01); H01L 23/50 (2006.01); H01L 23/522 (2006.01); H01L 23/552 (2006.01); H01L 23/66 (2006.01); H01L 27/06 (2006.01); H01L 29/08 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/36 (2006.01); H01L 29/66 (2006.01); H01L 29/737 (2006.01); H01L 29/812 (2006.01); H03F 1/02 (2006.01); H03F 3/19 (2006.01); H03F 3/195 (2006.01); H03F 3/21 (2006.01); H03F 3/213 (2006.01); H03F 3/24 (2006.01); H03F 3/60 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/8605 (2006.01); H03F 1/56 (2006.01); H03F 3/187 (2006.01); H03F 3/347 (2006.01); H03F 3/45 (2006.01)
CPC H03F 3/213 (2013.01) [H01L 21/485 (2013.01); H01L 21/4853 (2013.01); H01L 21/4864 (2013.01); H01L 21/565 (2013.01); H01L 21/76898 (2013.01); H01L 21/78 (2013.01); H01L 21/8249 (2013.01); H01L 21/8252 (2013.01); H01L 22/14 (2013.01); H01L 23/3114 (2013.01); H01L 23/481 (2013.01); H01L 23/49811 (2013.01); H01L 23/49827 (2013.01); H01L 23/49838 (2013.01); H01L 23/49844 (2013.01); H01L 23/49861 (2013.01); H01L 23/49866 (2013.01); H01L 23/50 (2013.01); H01L 23/522 (2013.01); H01L 23/552 (2013.01); H01L 23/66 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 24/85 (2013.01); H01L 24/97 (2013.01); H01L 27/0605 (2013.01); H01L 27/0623 (2013.01); H01L 29/0821 (2013.01); H01L 29/0826 (2013.01); H01L 29/20 (2013.01); H01L 29/205 (2013.01); H01L 29/36 (2013.01); H01L 29/66242 (2013.01); H01L 29/7371 (2013.01); H01L 29/812 (2013.01); H03F 1/0205 (2013.01); H03F 3/19 (2013.01); H03F 3/195 (2013.01); H03F 3/21 (2013.01); H03F 3/245 (2013.01); H03F 3/60 (2013.01); H01L 23/49894 (2013.01); H01L 24/45 (2013.01); H01L 27/092 (2013.01); H01L 29/0684 (2013.01); H01L 29/1004 (2013.01); H01L 29/66863 (2013.01); H01L 29/737 (2013.01); H01L 29/8605 (2013.01); H01L 2223/6611 (2013.01); H01L 2223/6616 (2013.01); H01L 2223/6644 (2013.01); H01L 2223/665 (2013.01); H01L 2223/6655 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/45139 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48177 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/48611 (2013.01); H01L 2224/48644 (2013.01); H01L 2224/48647 (2013.01); H01L 2224/48655 (2013.01); H01L 2224/48664 (2013.01); H01L 2224/48811 (2013.01); H01L 2224/48816 (2013.01); H01L 2224/48844 (2013.01); H01L 2224/48847 (2013.01); H01L 2224/48855 (2013.01); H01L 2224/48864 (2013.01); H01L 2224/4903 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/49176 (2013.01); H01L 2224/85205 (2013.01); H01L 2224/85207 (2013.01); H01L 2224/85411 (2013.01); H01L 2224/85416 (2013.01); H01L 2224/85444 (2013.01); H01L 2224/85455 (2013.01); H01L 2224/85464 (2013.01); H01L 2924/00011 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/12033 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13051 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/1421 (2013.01); H01L 2924/15747 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19105 (2013.01); H01L 2924/19107 (2013.01); H01L 2924/3011 (2013.01); H01L 2924/30111 (2013.01); H01L 2924/3025 (2013.01); H03F 1/565 (2013.01); H03F 3/187 (2013.01); H03F 3/347 (2013.01); H03F 3/45 (2013.01); H03F 2200/387 (2013.01); H03F 2200/451 (2013.01); H03F 2200/48 (2013.01); H03F 2200/555 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A power amplifier system comprising:
a power amplifier on a front side of a semiconductor substrate, the power amplifier including a bipolar transistor having a collector, a base, and an emitter;
a semiconductor resistor on the semiconductor substrate, the semiconductor resistor including a resistive layer formed of a same material as a layer of the bipolar transistor;
a tantalum nitride terminated through wafer via; and
a conductive layer on a back side of the semiconductor substrate that is opposite the front side of the semiconductor substrate, a portion of the conductive layer being in the tantalum nitride terminated through wafer via, and the conductive layer being electrically connected to the power amplifier.