	US 12,142,738 B2
	Power storage unit and solar power generation unit
Minoru Takahashi, Nagano (JP); Shunpei Yamazaki, Tokyo (JP); Masaaki Hiroki, Kanagawa (JP); Kei Takahashi, Kanagawa (JP); and Junpei Momo, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
Filed on Dec. 27, 2022, as Appl. No. 18/089,008.
Application 15/343,769 is a division of application No. 14/715,640, filed on May 19, 2015, granted, now 9,490,510, issued on Nov. 8, 2016.
Application 14/715,640 is a division of application No. 13/923,431, filed on Jun. 21, 2013, granted, now 9,088,056, issued on Jul. 21, 2015.
Application 18/089,008 is a continuation of application No. 17/154,462, filed on Jan. 21, 2021, granted, now 11,563,244.
Application 17/154,462 is a continuation of application No. 17/008,699, filed on Sep. 1, 2020, granted, now 10,978,757, issued on Apr. 13, 2021.
Application 17/008,699 is a continuation of application No. 15/984,452, filed on May 21, 2018, granted, now 10,797,367, issued on Oct. 6, 2020.
Application 15/984,452 is a continuation of application No. 15/343,769, filed on Nov. 4, 2016, granted, now 9,991,575, issued on Jun. 5, 2018.
Claims priority of application No. 2012-143765 (JP), filed on Jun. 27, 2012.
Prior Publication US 2023/0125496 A1, Apr. 27, 2023
Int. Cl. H02J 7/00 (2006.01); H01M 10/0525 (2010.01); H01M 10/44 (2006.01); H01M 10/46 (2006.01); H01M 10/48 (2006.01); H01M 10/615 (2014.01); H01M 10/63 (2014.01); H01M 10/637 (2014.01); H01M 10/6571 (2014.01); H02J 7/35 (2006.01); H02S 10/20 (2014.01); H01M 10/052 (2010.01)

CPC H01M 10/443 (2013.01) [H01M 10/0525 (2013.01); H01M 10/465 (2013.01); H01M 10/486 (2013.01); H01M 10/615 (2015.04); H01M 10/63 (2015.04); H01M 10/637 (2015.04); H01M 10/6571 (2015.04); H02J 7/35 (2013.01); H02S 10/20 (2014.12); H01M 10/052 (2013.01); Y02E 60/10 (2013.01)]

6 Claims

1. A power storage unit comprising:

a first circuit;

a second circuit; and

a control circuit electrically connected to the first circuit and the second circuit,

wherein the first circuit comprises:

a power storage device;

a first transistor being p-channel transistor;

a first diode; and

a temperature sensor,

wherein a drain of the first transistor is electrically connected to a positive electrode of the power storage device,

wherein an anode of the first diode is electrically connected to the positive electrode of the power storage device,

wherein the temperature sensor is configured to sense a temperature of the power storage device,

wherein a gate of the first transistor is electrically connected to the control circuit,

wherein the second circuit comprises:

a first resistor; and

a second transistor,

wherein one terminal of the first resistor is electrically connected to a drain of the second transistor and the control circuit,

wherein the other terminal of the first resistor is electrically connected to the first circuit and the control circuit,

wherein a gate of the second transistor is electrically connected to the control circuit,

wherein a source of the second transistor is electrically connected to a power source,

wherein the control circuit is configured to input a signal to the gate of the first transistor on the basis of data input from the temperature sensor and to input a signal to the gate of the second transistor on the basis of data input from the temperature sensor,

wherein the control circuit is configured to turn off the first transistor and to inhibit charging of the power storage device when a temperature sensed by the temperature sensor is lower than a first temperature,

wherein the control circuit is configured to turn on the first transistor and to allow charging of the power storage device when a temperature sensed by the temperature sensor is higher than or equal to the first temperature and lower than a second temperature, and

wherein the control circuit is configured to turn off the second transistor and to inhibit charging of the power storage device when a temperature sensed by the temperature sensor is higher than or equal to the second temperature.