| CPC H01M 10/0585 (2013.01) [H01M 4/8832 (2013.01); H01M 6/40 (2013.01); H01M 10/0436 (2013.01); H01M 10/0562 (2013.01)] | 12 Claims |

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1. A method for manufacturing an energy storage device, the method comprising:
providing a first stack on a first side of a substrate, the first stack comprising a first electrode layer, a second electrode layer, and a first electrolyte layer between the first electrode layer and the second electrode layer, the first electrode layer closer than the second electrode layer to the first side of the substrate;
providing a second stack on a second side of the substrate, opposite to the first side of the substrate, the second stack comprising a third electrode layer, a fourth electrode layer, and a second electrolyte layer between the third electrode layer and the fourth electrode layer, the third electrode layer closer than the fourth electrode layer to the second side of the substrate;
forming a first groove in a first side of the first stack, the first side of the first stack opposite to a second side of the first stack in contact with the first side of the substrate, the first groove having a first depth;
forming a second groove in a first side of the second stack, the first side of the second stack opposite to a second side of the second stack in contact with the second side of the substrate, the second groove having a second depth;
forming a third groove in the first side of the first stack, the third groove having a third depth different from the first depth; and
forming a fourth groove in the first side of the second stack, the fourth groove having a fourth depth different from the second depth.
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