US 12,142,717 B2
Light emitting diode structure and method for manufacturing the same
Wing Cheung Chong, Hong Kong (CN)
Assigned to Raysolve Optoelectronics (Suzhou) Company Limited, Suzhou (CN)
Filed by Raysolve Optoelectronics (Suzhou) Company Limited, Suzhou (CN)
Filed on Feb. 17, 2021, as Appl. No. 17/177,827.
Claims priority of provisional application 63/007,831, filed on Apr. 9, 2020.
Prior Publication US 2021/0320234 A1, Oct. 14, 2021
Int. Cl. H01L 33/62 (2010.01); H01L 25/075 (2006.01); H01L 25/16 (2023.01); H01L 33/00 (2010.01); H01L 33/04 (2010.01); H01L 33/38 (2010.01); H01L 33/54 (2010.01)
CPC H01L 33/62 (2013.01) [H01L 33/0093 (2020.05); H01L 33/0095 (2013.01); H01L 33/04 (2013.01); H01L 33/382 (2013.01); H01L 33/54 (2013.01); H01L 2933/005 (2013.01); H01L 2933/0066 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A light emitting diode (LED) structure, comprising:
a substrate;
a bonding layer formed on the substrate;
a first doping type semiconductor layer formed on the bonding layer;
a multiple quantum well (MQW) layer formed on the first doping type semiconductor layer;
a second doping type semiconductor layer formed on the MQW layer, wherein the second doping type semiconductor layer comprises an isolation material made through implantation;
a passivation layer formed on the second doping type semiconductor layer; and
an electrode layer formed on the passivation layer in contact with a portion of the second doping type semiconductor layer through a first opening on the passivation layer,
wherein the isolation material divides the second doping type semiconductor layer into a plurality of LED mesas.