US 12,142,710 B2
Micro light-emitting diode display device
Yen-Yeh Chen, Zhunan Township, Miaoli County (TW); and Sheng-Yuan Sun, Zhunan Township, Miaoli County (TW)
Assigned to PLAYNITRIDE DISPLAY CO., LTD., Miaoli County (TW)
Filed by PlayNitride Display Co., Ltd., Zhunan Township, Miaoli County (TW)
Filed on Dec. 6, 2021, as Appl. No. 17/543,305.
Claims priority of application No. 110130934 (TW), filed on Aug. 20, 2021.
Prior Publication US 2023/0058551 A1, Feb. 23, 2023
Int. Cl. H01L 33/50 (2010.01); H01L 25/075 (2006.01); H01L 33/60 (2010.01); H01L 33/62 (2010.01)
CPC H01L 33/505 (2013.01) [H01L 25/0753 (2013.01); H01L 33/60 (2013.01); H01L 33/62 (2013.01)] 23 Claims
OG exemplary drawing
 
1. A micro LED display device, comprising:
a circuit substrate having a bonding surface;
an epitaxial structure layer disposed on the bonding surface of the circuit substrate, wherein the epitaxial structure layer comprises a first surface facing the circuit substrate, a second surface away from the circuit substrate, and a plurality of micro LED units separated from each other, the micro LED units are located on the first surface and electrically connected to the circuit substrate, and the circuit substrate controls the micro LED units to emit light;
a metal conductive layer disposed on the second surface of the epitaxial structure layer and directly contacting the epitaxial structure layer, wherein the metal conductive layer defines a plurality of light conversion regions separated from each other, and each of the light conversion regions corresponds to one of the micro LED units;
a light conversion layer disposed in a part of the light conversion regions and configured to convert wavelengths of lights emitted from the corresponding micro LED units; and
a light-shielding structure having a plurality of first light-shielding portions disposed on the metal conductive layer, wherein the first light-shielding portions do not cover the light conversion regions;
wherein, in a direction perpendicular to the bonding surface of the circuit substrate, a thickness of the metal conductive layer is greater than a thickness of the epitaxial structure layer.