US 12,142,705 B2
Method for regulating photocurrent of IGZO based on two-dimensional black phosphorus material
Haiyan Nan, Wuxi (CN); Daqing Li, Wuxi (CN); Feng Shao, Wuxi (CN); Shaoqing Xiao, Wuxi (CN); and Xiaofeng Gu, Wuxi (CN)
Assigned to Jiangnan University, Wuxi (CN)
Filed by Jiangnan University, Wuxi (CN)
Filed on May 31, 2022, as Appl. No. 17/828,096.
Application 17/828,096 is a continuation of application No. PCT/CN2020/093208, filed on May 29, 2020.
Claims priority of application No. 201911421184.8 (CN), filed on Dec. 31, 2019.
Prior Publication US 2022/0302335 A1, Sep. 22, 2022
Int. Cl. H01L 31/18 (2006.01); H01L 31/109 (2006.01)
CPC H01L 31/109 (2013.01) [H01L 31/1884 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method, comprising:
transferring a black phosphorus layer onto an indium gallium zinc oxide (IGZO) device, the IGZO device comprising an IGZO film supported on a substrate and a source electrode and a drain electrode both in electrical contact with the IGZO film, with a channel of the IGZO film separating the source electrode and the drain electrode;
wherein the black phosphorus layer spans the channel and contacts both the source electrode and the drain electrode; or
the black phosphorus layer is entirely in the channel and is not in contact with the source electrode or the drain electrode; or
the IGZO device comprises a boron nitride layer contacting the source electrode and the drain electrode, and the black phosphorus layer is insulated by the boron nitride layer from the IGZO film, the source electrode and the drain electrode; or
the IGZO device comprises a boron nitride layer over the channel but not contacting the source electrode or the drain electrode, and the black phosphorus layer contacts both the source electrode and the drain electrode but is insulated by the boron nitride layer from the IGZO film.