| CPC H01L 29/7869 (2013.01) [H01L 29/78618 (2013.01)] | 11 Claims |
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1. A semiconductor device comprising:
a first insulator;
a first oxide over the first insulator;
a second oxide over the first oxide;
a first conductor functioning as one of a source electrode and a drain electrode, a second conductor functioning as the other of the source electrode and the drain electrode, a third oxide, a fourth oxide, and a second insulator over the second oxide;
a third insulator over the first conductor, the second conductor, the third oxide, and the fourth oxide;
a fourth insulator over the second insulator; and
a third conductor over the fourth insulator, the third conductor functioning as a gate electrode,
wherein the second insulator is positioned between the first conductor and the second conductor,
wherein the third oxide is positioned between the first conductor and the second insulator,
wherein the fourth oxide is positioned between the second conductor and the second insulator,
wherein the second oxide comprises a first region, a second region, a third region, a fourth region, and a fifth region,
wherein the first region comprises a region in contact with the first conductor,
wherein the second region comprises a region in contact with the third oxide,
wherein the third region comprises a region overlapping the third conductor,
wherein the fourth region comprises a region in contact with the fourth oxide,
wherein the fifth region comprises a region in contact with the second conductor,
wherein a length of the second region between the first region and the third region is greater than or equal to 3 nm and less than or equal to 8 nm,
wherein a length of the fourth region between the third region and the fifth region is greater than or equal to 3 nm and less than or equal to 8 nm, and
wherein a length of the third region between the second region and the fourth region is greater than or equal to 5 nm and less than or equal to 40 nm.
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