US 12,142,681 B2
Semiconductor device having a shaped epitaxial region with shaping section
Yi-Min Huang, Tainan (TW); Shih-Chieh Chang, Taipei (TW); and Cheng-Han Lee, New Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 19, 2021, as Appl. No. 17/379,569.
Application 17/379,569 is a division of application No. 16/569,842, filed on Sep. 13, 2019, granted, now 11,069,810.
Application 16/569,842 is a division of application No. 16/049,518, filed on Jul. 30, 2018, granted, now 10,505,042, issued on Dec. 10, 2019.
Application 16/049,518 is a division of application No. 15/284,101, filed on Oct. 3, 2016, granted, now 10,164,098, issued on Dec. 25, 2018.
Claims priority of provisional application 62/357,161, filed on Jun. 30, 2016.
Prior Publication US 2021/0351298 A1, Nov. 11, 2021
Int. Cl. H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01); H01L 29/24 (2006.01); H01L 29/267 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7848 (2013.01) [H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/0262 (2013.01); H01L 29/0847 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/24 (2013.01); H01L 29/267 (2013.01); H01L 29/66628 (2013.01); H01L 29/66636 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 2924/13067 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a channel region within a semiconductor material; and
a source/drain region adjacent to the channel region, wherein the source/drain region has a height to width ratio of between about 0.5 and about 10 and comprises:
a bulk region with a first concentration of a first dopant;
an interface region with a second concentration of the first dopant less than the first concentration; and
a cleaning region with a third concentration of the first dopant greater than the second concentration and the first concentration, wherein the interface region is between the bulk region and the cleaning region.