US 12,142,648 B2
Semiconductor device with sic semiconductor layer and raised portion group
Seiya Nakazawa, Kyoto (JP); and Sawa Haruyama, Kyoto (JP)
Assigned to ROHM CO., LTD., Kyoto (JP)
Filed by ROHM CO., LTD., Kyoto (JP)
Filed on Sep. 27, 2022, as Appl. No. 17/954,049.
Application 17/954,049 is a continuation of application No. 16/981,127, granted, now 11,489,051, previously published as PCT/JP2019/012972, filed on Mar. 26, 2019.
Claims priority of application No. 2018-068567 (JP), filed on Mar. 30, 2018; and application No. 2018-068568 (JP), filed on Mar. 30, 2018.
Prior Publication US 2023/0019769 A1, Jan. 19, 2023
Int. Cl. H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01)
CPC H01L 29/417 (2013.01) [H01L 21/0485 (2013.01); H01L 29/1608 (2013.01); H01L 29/41741 (2013.01); H01L 29/6606 (2013.01); H01L 21/0465 (2013.01); H01L 21/049 (2013.01); H01L 29/0619 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01); H01L 29/872 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a SiC semiconductor layer that has a first main surface on one side and a second main surface on the other side;
a semiconductor element that is formed in the first main surface;
a raised portion group that includes a plurality of raised portions formed in the second main surface at intervals from each other;
an electrode that is directly connected to the raised portion group on the second main surface; and
a modified layer in which SiC of the SiC semiconductor layer is partially modified to have different properties and is formed in a surface layer portion of the second main surface, wherein
the modified layer includes Si atoms and C atoms, and
the modified layer has a carbon density lower than a carbon density of a region of the SiC semiconductor layer outside the modified layer.