US 12,142,642 B2
Field assisted interfacial diffusion doping through heterostructure design
Joel Basile Varley, Livermore, CA (US); Noah Patrick Allen, Oakland, CA (US); Clint Frye, Livermore, CA (US); Kyoung Eun Kweon, Pleasonton, CA (US); Vincenzo Lordi, Livermore, CA (US); and Lars Voss, Livermore, CA (US)
Assigned to Lawrence Livermore National Security, LLC, Livermore, CA (US)
Filed by Lawrence Livermore National Security, LLC, Livermore, CA (US)
Filed on Feb. 3, 2021, as Appl. No. 17/166,962.
Application 17/166,962 is a continuation in part of application No. 16/446,460, filed on Jun. 19, 2019, granted, now 10,930,506.
Claims priority of provisional application 63/056,290, filed on Jul. 24, 2020.
Claims priority of provisional application 62/687,635, filed on Jun. 20, 2018.
Prior Publication US 2021/0257463 A1, Aug. 19, 2021
Int. Cl. H01L 29/20 (2006.01); H01L 21/225 (2006.01); H01L 29/45 (2006.01)
CPC H01L 29/2003 (2013.01) [H01L 21/2258 (2013.01); H01L 29/45 (2013.01)] 27 Claims
OG exemplary drawing
 
1. An apparatus for enhancing impurity diffusion in a substrate material, comprising:
a heterostructure comprising,
a substrate comprising a Group-III-nitride material;
a source layer positioned on a surface of the substrate, wherein the source layer extends the entire length of the substrate, the source layer comprising a dopant including a magnesium compound; and
a conductive cap layer positioned on the source layer, the conductive cap layer comprising at least one material selected from the group consisting of: a metal, a transparent conductor material, and a conductor material,
wherein the conductive cap layer has at least one element of the Group-III-nitride material originating from the substrate,
wherein a deposition thickness of the heterostructure is in a range of 1 nanometer to 5000 nanometers.