US 12,142,639 B2
Electronic device with gallium nitride transistors and method of making same
Qhalid R S Fareed, Plano, TX (US); Dong Seup Lee, Mckinney, TX (US); and Nicholas S. Dellas, Dallas, TX (US)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by Texas Instruments Incorporated, Dallas, TX (US)
Filed on Jul. 5, 2023, as Appl. No. 18/347,234.
Application 18/347,234 is a continuation of application No. 17/085,558, filed on Oct. 30, 2020, granted, now 11,742,390.
Prior Publication US 2023/0343829 A1, Oct. 26, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/15 (2006.01); H01L 21/02 (2006.01)
CPC H01L 29/151 (2013.01) [H01L 21/02458 (2013.01); H01L 21/02507 (2013.01); H01L 21/02532 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a first superlattice over the substrate, the first superlattice including alternating pairs of respective aluminum nitride and aluminum gallium nitride layers;
a second superlattice over the first superlattice, the second superlattice including alternating pairs of respective aluminum nitride and gallium nitride layers;
a hetero-epitaxy structure over the second superlattice;
a silicon nitride cap layer over the hetero-epitaxy structure; and
a transistor having a gate over the hetero-epitaxy structure, a drain extended into the hetero-epitaxy structure and spaced apart from the gate, and a source extended into the hetero-epitaxy structure and spaced apart from the gate and from the drain.