US 12,142,638 B2
Semiconductor structure
Meng-Hsuan Hsiao, Hsinchu (TW); Winnie Victoria Wei-Ning Chen, Zhubei (TW); and Tung Ying Lee, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 28, 2023, as Appl. No. 18/343,475.
Application 17/871,507 is a division of application No. 16/733,761, filed on Jan. 3, 2020, granted, now 11,411,083, issued on Aug. 9, 2022.
Application 18/343,475 is a continuation of application No. 17/871,507, filed on Jul. 22, 2022, granted, now 11,728,384.
Application 16/733,761 is a continuation of application No. 15/879,888, filed on Jan. 25, 2018, granted, now 10,535,738, issued on Jan. 14, 2020.
Claims priority of provisional application 62/579,422, filed on Oct. 31, 2017.
Prior Publication US 2023/0352535 A1, Nov. 2, 2023
Int. Cl. H01L 29/10 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/165 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/1083 (2013.01) [H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 27/092 (2013.01); H01L 27/0924 (2013.01); H01L 29/0673 (2013.01); H01L 29/165 (2013.01); H01L 29/66742 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate;
a fin protruding from the substrate in a first direction, wherein the fin comprises a well region and an anti-punch through region over the well region;
a barrier layer formed over the anti-punch through region;
channel layers formed over the fin and spaced apart from the barrier layer in the first direction;
a first liner layer formed around the fin;
an isolation structure formed over the first liner layer; and
a gate wrapping around the channel layers and extending in a second direction;
wherein a top surface of the barrier layer is higher than a top surface of the first liner layer in a cross-sectional view along the second direction.