US 12,142,624 B2
Image sensor
Cheng-Yu Hsieh, Singapore (SG)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Oct. 16, 2023, as Appl. No. 18/380,649.
Application 18/380,649 is a continuation of application No. 17/333,040, filed on May 28, 2021, granted, now 12,027,555.
Claims priority of application No. 202110504117.3 (CN), filed on May 10, 2021.
Prior Publication US 2024/0047497 A1, Feb. 8, 2024
Int. Cl. H01L 27/146 (2006.01)
CPC H01L 27/1463 (2013.01) [H01L 27/14621 (2013.01); H01L 27/14629 (2013.01); H01L 27/14636 (2013.01); H01L 27/14649 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor, comprising:
a semiconductor substrate having a first surface and a second surface opposite to the first surface in a vertical direction;
a first isolation structure disposed in the semiconductor substrate for defining pixel regions in the semiconductor substrate;
at least one visible light detection structure disposed in the semiconductor substrate;
at least one infrared light detection structure disposed in the semiconductor substrate, wherein the at least one visible light detection structure and the at least one infrared light detection structure are disposed within one of the pixel regions, and the at least one visible light detection structure comprises:
a first portion disposed between the at least one infrared light detection structure and the second surface of the semiconductor substrate in the vertical direction; and
a second portion disposed between the at least one infrared light detection structure and the first isolation structure in a horizontal direction; and
a reflective layer disposed on the first surface of the semiconductor substrate, wherein the at least one infrared light detection structure is disposed between the reflective layer and the first portion of the at least one visible light detection structure in the vertical direction, and the second portion of the at least one visible light detection structure is not sandwiched between the reflective layer and the second surface of the semiconductor substrate in the vertical direction.