| CPC H01L 27/14603 (2013.01) [G01S 7/4816 (2013.01); H01L 27/14636 (2013.01); H01L 27/14649 (2013.01); H01L 27/14685 (2013.01); H01L 27/1463 (2013.01)] | 16 Claims |
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1. A light detector, comprising:
a plurality of elements located in a cell region and arranged along a first direction and a second direction, the second direction crossing the first direction, each of the elements including
a first semiconductor region of a first conductivity type,
a second semiconductor region located on the first semiconductor region, the second semiconductor region being of the first conductivity type and including a higher first-conductivity-type impurity concentration than the first semiconductor region, and
a third semiconductor region located on the second semiconductor region, the third semiconductor region being of a second conductivity type;
a plurality of separation parts located respectively around the elements in a first plane parallel to the first and second directions;
a fourth semiconductor region located around each of the separation parts in the first plane, the fourth semiconductor region being of the first conductivity type;
a fifth semiconductor region located on the fourth semiconductor region, the fifth semiconductor region being of the second conductivity type;
a first interconnect electrically connected to at least a portion of the third semiconductor regions;
a first quenching part electrically connected to the first interconnect; and
a second interconnect electrically connected to the fifth semiconductor region at a periphery of the cell region.
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