| CPC H01L 27/1244 (2013.01) [H01L 27/1225 (2013.01); H01L 27/124 (2013.01); H01L 27/1248 (2013.01); H01L 29/7869 (2013.01)] | 17 Claims |

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1. An electronic device, comprising:
a substrate;
a first wiring layer, disposed on the substrate and comprising an outer metal layer, wherein the outer metal layer contains at least 97 wt % molybdenum;
an oxide insulating layer, disposed on the first wiring layer and touching the outer metal layer; and
a nitride insulating layer, disposed on the oxide insulating layer, wherein the oxide insulating layer is positioned between the nitride insulating layer and the outer metal layer, and a thickness difference between the thickness of the oxide insulating layer and the thickness of the nitride insulating layer is greater than or equal to 250 nm.
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