| CPC H01L 27/0658 (2013.01) [H01L 23/4824 (2013.01); H01L 28/20 (2013.01); H01L 29/7397 (2013.01)] | 14 Claims |
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1. A semiconductor device including a switching element having an insulated gate structure, the switching element being provided in a semiconductor substrate of a first conductivity type, the semiconductor device comprising:
a gate wiring that is provided on the semiconductor substrate with an interlayer insulating film interposed therebetween and electrically connected to a gate electrode of the switching element;
a gate pad that is provided on the semiconductor substrate with the interlayer insulating film interposed therebetween and has an electrical connection region whose surface is exposed; and
a built-in gate resistance region that electrically connects the gate wiring and the gate pad, wherein
the built-in gate resistance region includes N (N≥2) partial built-in gate resistance regions connected in parallel between the gate wiring and the gate pad,
each of the N partial built-in gate resistance regions includes M (M≥2) built-in gate resistance trenches connected in parallel between the gate wiring and the gate pad,
the gate wiring has a wiring side contact region overlapping the M built-in gate resistance trenches in plan view,
the gate pad has a pad side contact region overlapping the M built-in gate resistance trenches in plan view,
each of the M built-in gate resistance trenches is embedded in the semiconductor substrate,
K (M≥K≥2) of the M built-in gate resistance trenches function as practical built-in gate resistance trenches,
each of the K practical built-in gate resistance trenches
is electrically connected to the wiring side contact region of the gate wiring via a wiring contact provided penetrating the interlayer insulating film, and
is electrically connected to the pad side contact region of the gate pad via a pad contact provided penetrating the interlayer insulating film, and
in each of the K practical built-in gate resistance trenches, a gate current path is provided between the wiring contact and the pad contact, and a distance between the wiring contact and the pad contact in the gate current path is defined as an inter-contact distance.
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