US 12,142,602 B2
Light emitting diode for display and display apparatus having the same
Jong Hyeon Chae, Ansan-si (KR); Chang Yeon Kim, Ansan-si (KR); Ho Joon Lee, Ansan-si (KR); Seong Gyu Jang, Ansan-si (KR); Chung Hoon Lee, Ansan-si (KR); and Dae Sung Cho, Ansan-si (KR)
Assigned to Seoul Viosys Co., Ltd., Ansan-si (KR)
Filed by Seoul Viosys Co., Ltd., Ansan-si (KR)
Filed on Jun. 20, 2022, as Appl. No. 17/844,653.
Application 17/844,653 is a continuation of application No. 17/541,229, filed on Dec. 2, 2021.
Application 17/541,229 is a continuation of application No. 16/200,036, filed on Nov. 26, 2018, granted, now 12,100,696.
Claims priority of provisional application 62/624,667, filed on Jan. 31, 2018.
Claims priority of provisional application 62/624,639, filed on Jan. 31, 2018.
Claims priority of provisional application 62/621,492, filed on Jan. 24, 2018.
Claims priority of provisional application 62/598,223, filed on Dec. 13, 2017.
Claims priority of provisional application 62/597,614, filed on Dec. 12, 2017.
Claims priority of provisional application 62/595,415, filed on Dec. 6, 2017.
Claims priority of provisional application 62/590,830, filed on Nov. 27, 2017.
Prior Publication US 2022/0392879 A1, Dec. 8, 2022
Int. Cl. H01L 25/13 (2006.01); H01L 25/075 (2006.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01); H01L 33/50 (2010.01); H01L 33/62 (2010.01)
CPC H01L 25/13 (2013.01) [H01L 25/0756 (2013.01); H01L 27/156 (2013.01); H01L 33/0093 (2020.05); H01L 33/405 (2013.01); H01L 33/50 (2013.01); H01L 33/62 (2013.01); H01L 25/0753 (2013.01); H01L 33/38 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A light emitting device comprising:
a first LED sub-unit having a thickness in a first direction;
a second LED sub-unit disposed on a portion of the first LED sub-unit in the first direction, each of the first and second LED sub-units comprising a first-type semiconductor layer, a second-type semiconductor layer, and an active layer;
a reflective electrode disposed adjacent to the first LED sub-unit and electrically connected to the first-type semiconductor layer of the first LED sub-unit; and
a first ohmic electrode forming ohmic contact with the second-type semiconductor layer of the first LED sub-unit,
wherein:
the active layer of the first LED sub-unit is configured to generate light, comprises AlxGa(1-x-y)InyP (0≤x≤1, 0≤y≤1), and overlaps the active layer of the second LED sub-unit in the first direction;
the active layer of the second LED sub-unit comprises the same material as the active layer of the first LED sub-unit;
the second LED sub-unit is configured to emit light having the same color as that emitted from the first LED sub-unit; and
a peak wavelength of the first LED sub-unit is different from a peak wavelength of the second LED sub-unit.