CPC H01L 24/81 (2013.01) [H01L 24/75 (2013.01); H01L 24/97 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 2224/11334 (2013.01); H01L 2224/11422 (2013.01); H01L 2224/11424 (2013.01); H01L 2224/1308 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13116 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/75101 (2013.01); H01L 2224/75252 (2013.01); H01L 2224/75253 (2013.01); H01L 2224/75283 (2013.01); H01L 2224/75651 (2013.01); H01L 2224/75754 (2013.01); H01L 2224/759 (2013.01); H01L 2224/7598 (2013.01); H01L 2224/8113 (2013.01); H01L 2224/81132 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81192 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/8121 (2013.01); H01L 2224/8122 (2013.01); H01L 2224/81224 (2013.01); H01L 2224/8123 (2013.01); H01L 2224/81801 (2013.01); H01L 2224/81805 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/97 (2013.01); H01L 2924/3511 (2013.01); Y10T 29/49144 (2015.01)] | 19 Claims |
1. A method of processing a semiconductor device, the method comprising:
attaching a first package component to a support, the first package component comprising a substrate with contact pads formed thereon;
disposing a tool over the first package component, the tool comprising an aperture configured to enclose the first package component, the tool comprising a reflective first surface most distal from the support, wherein the reflective first surface reflects radiation energy with a first wavelength, wherein the reflective first surface of the tool has a higher reflectivity to the radiation energy than a second surface opposite the first surface of the tool and the reflective first surface of the tool has a higher reflectivity to infrared (IR) energy at a different wavelength than the radiation energy than the second surface of the tool;
placing a second package component over the first package component within the aperture of the tool; and
exposing the tool and the second package component to the radiation energy.
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