US 12,142,582 B2
Organic interposer including a dual-layer inductor structure and methods of forming the same
Wei-Han Chiang, Hsinchu (TW); Chun-Hung Chen, Xinpu Township (TW); Ching-Ho Cheng, Hsinchu (TW); Hsiao Ching-Wen, Hsinchu (TW); Hong-Seng Shue, Zhubei (TW); Ming-Da Cheng, Taoyuan (TW); and Wei Sen Chang, Jinsha Township (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Jul. 28, 2023, as Appl. No. 18/360,883.
Application 18/360,883 is a continuation of application No. 17/826,369, filed on May 27, 2022.
Application 17/826,369 is a continuation of application No. 17/097,165, filed on Nov. 13, 2020, granted, now 11,348,884, issued on May 31, 2022.
Prior Publication US 2023/0369255 A1, Nov. 16, 2023
Int. Cl. H01L 21/683 (2006.01); H01L 21/48 (2006.01); H01L 23/00 (2006.01); H01L 23/14 (2006.01); H01L 23/538 (2006.01); H01L 23/64 (2006.01); H01L 49/02 (2006.01)
CPC H01L 23/645 (2013.01) [H01L 21/4857 (2013.01); H01L 21/6835 (2013.01); H01L 23/145 (2013.01); H01L 23/5383 (2013.01); H01L 23/5386 (2013.01); H01L 24/16 (2013.01); H01L 28/10 (2013.01); H01L 2221/6835 (2013.01); H01L 2224/16227 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19103 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An organic interposer comprising:
interconnect-level dielectric material layers embedding redistribution interconnect structures;
a dual-layer metal structure that comprises:
a lower metal line structure embedded within the interconnect-level dielectric material layer,
a conductive via structure vertically extending through a dielectric capping layer, contacting a top surface of the lower metal line structure, and comprising a vertically-extending portion of a metal seed layer and a vertically-extending portion of a spiral-shaped copper portion, and
an upper metal line structure contacting a top surface of the dielectric capping layer and comprising a horizontally-extending portion of the metal seed layer and a horizontally-extending portion of the spiral-shaped copper portion;
a first bump structure contacting a first segment of a top surface of the dual-layer metal structure; and
a bonding-level dielectric layer laterally surrounding the upper metal line structure, wherein the first bump structure comprises a first bump pillar portion overlying the bonding-level dielectric layer and a first bump via portion that extends through the bonding-level dielectric layer.