US 12,142,534 B2
Replacement contact process
Sankuei Lin, Cupertino, CA (US); Ajay Bhatnagar, Mountain View, CA (US); and Nitin Ingle, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Mar. 8, 2021, as Appl. No. 17/194,825.
Application 17/194,825 is a division of application No. 15/918,613, filed on Mar. 12, 2018, granted, now 10,943,834.
Claims priority of provisional application 62/470,707, filed on Mar. 13, 2017.
Prior Publication US 2021/0217668 A1, Jul. 15, 2021
Int. Cl. H01L 27/092 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01)
CPC H01L 21/823871 (2013.01) [H01L 21/02603 (2013.01); H01L 21/76805 (2013.01); H01L 21/76831 (2013.01); H01L 21/76895 (2013.01); H01L 21/76897 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 27/092 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/41733 (2013.01); H01L 29/42392 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, the semiconductor structure comprising:
two contact regions proximate a gate and separated by an interior region proximate the gate, wherein a metal material is formed about contacts in the two contact regions, wherein the interior region comprises a liner material, the interior region comprises an oxide layer between the liner material and a spacer layer, and the spacer layer is between the oxide layer and the gate, and wherein the contacts comprise multiple sections of a sawtooth profile along both vertical sides of the contacts such that the metal material fills the multiple sections of the sawtooth profile around the contacts.
 
8. A semiconductor structure, the semiconductor structure comprising:
two contact regions proximate a gate and separated by an interior region proximate the gate, wherein a metal material is formed about contacts in the two contact regions, the contacts comprise multiple sections of a sawtooth profile along both vertical sides of the contacts such that the metal material fills the multiple sections of the sawtooth profile around the contacts, and the interior region comprises a liner material and an oxide contact etch stop layer between the two contact regions.
 
16. A semiconductor structure, the semiconductor structure comprising:
two contact regions proximate a gate and separated by an interior region proximate the gate, wherein a metal material is formed around contacts in the two contact regions down to a substrate, wherein the interior region comprises a liner material and an oxide layer between the two contact regions, and wherein the contacts comprise multiple sections of a sawtooth profile along both vertical sides of the contacts such that the metal material fills the multiple sections of the sawtooth profile around the contacts.