US 12,142,524 B2
Via for component electrode connection
Chen-Hua Yu, Hsinchu (TW); Chi-Hsi Wu, Hsinchu (TW); Wen-Chih Chiou, Zhunan Township (TW); Tsang-Jiuh Wu, Hsinchu (TW); Der-Chyang Yeh, Hsinchu (TW); Ming Shih Yeh, Zhubei (TW); and An-Jhih Su, Taoyuan (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 21, 2022, as Appl. No. 17/870,467.
Application 17/870,467 is a continuation of application No. 16/213,623, filed on Dec. 7, 2018, granted, now 11,469,138.
Claims priority of provisional application 62/667,305, filed on May 4, 2018.
Prior Publication US 2022/0359284 A1, Nov. 10, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 29/40 (2006.01)
CPC H01L 21/76877 (2013.01) [H01L 21/76843 (2013.01); H01L 21/76871 (2013.01); H01L 23/5226 (2013.01); H01L 24/09 (2013.01); H01L 29/40 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a first metal pad and a second metal pad disposed at an upper surface of a substrate;
a first component attached to the first metal pad, the first component comprising a bottom electrode and a top electrode, the bottom electrode attached to the first metal pad, the top electrode electrically coupled to the second metal pad;
an encapsulant over the substrate and laterally encapsulating the first component, the encapsulant having an upper surface further from the substrate than an upper surface of the first component;
a first metal via disposed within the encapsulant adjacent the first component, the first metal via disposed directly over and electrically coupled to the second metal pad, the first metal via having a vertical sidewall that extends continuously vertically from an uppermost surface of the encapsulant to a lower than a bottommost surface of the encapsulant in a cross-sectional view; and
a conductive bridge coupling the top electrode of the first component to a top portion of the first metal via.