US 12,142,510 B2
Carrier for microelectronic assemblies having direct bonding
Shawna M. Liff, Scottsdale, AZ (US); Johanna M. Swan, Scottsdale, AZ (US); Adel A. Elsherbini, Tempe, AZ (US); Michael J. Baker, Gilbert, AZ (US); Aleksandar Aleksov, Chandler, AZ (US); and Feras Eid, Chandler, AZ (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Dec. 23, 2020, as Appl. No. 17/132,429.
Prior Publication US 2022/0199450 A1, Jun. 23, 2022
Int. Cl. H01L 21/683 (2006.01); H01L 21/67 (2006.01); H01L 23/00 (2006.01)
CPC H01L 21/6833 (2013.01) [H01L 21/67092 (2013.01); H01L 24/75 (2013.01); H01L 2224/75983 (2013.01); H01L 2224/75985 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A carrier assembly, comprising:
a carrier having a front side and an opposing back side;
a plurality of electrodes on the front side of the carrier;
a dielectric material, having a relative permittivity greater than 1, on the plurality of electrodes and the carrier, wherein the dielectric material includes texturized microstructures comprising a plurality of capped pillars;
a plurality of charging contacts on the back side of the carrier coupled to the plurality of electrodes; and
a plurality of microelectronic components mechanically and electrostatically coupled to caps of the plurality of capped pillars.