US 12,142,497 B2
Heating platform, thermal treatment and manufacturing method
Hsiao-Hua Peng, Hsinchu County (TW); and Hann-Ru Chen, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 30, 2021, as Appl. No. 17/363,033.
Application 17/363,033 is a division of application No. 15/866,479, filed on Jan. 10, 2018, granted, now 11,107,708.
Claims priority of provisional application 62/585,537, filed on Nov. 14, 2017.
Prior Publication US 2021/0327730 A1, Oct. 21, 2021
Int. Cl. H01L 21/67 (2006.01); G05D 23/19 (2006.01); H01L 21/02 (2006.01); H05B 3/00 (2006.01)
CPC H01L 21/67098 (2013.01) [G05D 23/1917 (2013.01); H01L 21/0226 (2013.01); H01L 21/67069 (2013.01); H01L 21/67075 (2013.01); H01L 21/67103 (2013.01); H01L 21/67109 (2013.01); H01L 21/67115 (2013.01); H01L 21/67248 (2013.01); H01L 21/67253 (2013.01); H05B 3/0047 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A heating platform for heating a wafer, the heating platform comprising:
a support carrier, the wafer being supported by the support carrier;
a detection module, configured to monitor a surface condition of the wafer supported by the support carrier; a first heating module disposed on the support carrier and located between the wafer and the support carrier, wherein the first heating module comprises a plurality of first heating units electrically connected to the detection module, and the first heating units are arranged in rows and columns, and each of the plurality of first heating units comprises a fluid pipe containing heating fluid, wherein the fluid pipe in each of the plurality of first heating units is arranged in a spiral form.