US 12,142,495 B2
Etching method and etching apparatus
Toshiki Kanaki, Albany, NY (US); Nobuhiro Takahashi, Nirasaki (JP); and Megumi Umemoto, Nirasaki (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Feb. 14, 2022, as Appl. No. 17/670,844.
Claims priority of application No. 2021-022826 (JP), filed on Feb. 16, 2021.
Prior Publication US 2022/0262655 A1, Aug. 18, 2022
Int. Cl. H01L 21/67 (2006.01); H01L 21/04 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01)
CPC H01L 21/67069 (2013.01) [H01L 21/0475 (2013.01); H01L 21/3065 (2013.01); H01L 21/3085 (2013.01); H01L 21/3086 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01)] 12 Claims
OG exemplary drawing
 
1. An etching method comprising:
forming a protective film by supplying a protective film forming gas including at least one of a compound including a hydroxyl group and water to a substrate including a surface on which a first film and a second film are formed, each of which has a property of being etched by an etching gas, wherein the protective film covers the first film such that the first film is selectively protected from among the first film and the second film when the etching gas is supplied; and
selectively etching the second film by supplying the etching gas to the substrate in a state in which the protective film is formed,
wherein the first film, a porous film, and the second film are provided adjacent to each other in this order on the substrate,
the forming the protective film includes forming the protective film in a pore of the porous film to close the pore, and
the selectively etching the second film includes supplying the etching gas in a state in which the pore of the porous film is closed.