| CPC H01L 21/67051 (2013.01) [H01J 37/3244 (2013.01); H01J 37/32715 (2013.01); H01J 37/32788 (2013.01); H01L 21/68764 (2013.01); H01J 2237/3344 (2013.01)] | 8 Claims |
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1. An apparatus for processing a substrate, the apparatus comprising:
a controller;
a plasma treatment unit coupled to the controller; and
a liquid treatment unit coupled to the controller coupled to the plasma treatment unit,
wherein the liquid treatment unit includes:
a cup having a treatment space in the cup;
a liquid supply unit including a nozzle and configured to supply a treatment liquid to the substrate supported by a rotating substrate chuck,
wherein the controller is configured to control:
the plasma treatment unit to collide ions of a treatment gas in a plasma state with a film of the substrate to weaken a binding energy of the film, without etching the film; and
the liquid treatment unit to etch the film from the substrate, transferred from the plasma treatment unit, with a treatment liquid,
wherein the plasma treatment unit includes:
a process chamber having a treatment space inside the process chamber;
a gas supply unit including a shower head and configured to supply the treatment gas in two different amounts per a unit area of the substrate into the process chamber; and
a plasma source configured to excite the treatment gas to be in the plasma state,
wherein the gas supply unit is configured to supply a first amount, per a unit area of the substrate, of the treatment gas to an edge area of the substrate and a second amount, per a unit area of the substrate, of the treatment gas to a central area of the substrate,
wherein the first amount of the treatment gas is different from the second amount of the treatment gas, and
wherein the shower head includes:
a central area supply unit including a plurality of first gas spraying holes and configured to spray the treatment gas to the central area of the substrate via the plurality of first gas spraying holes; and
an edge area supply unit including a plurality of second gas spraying holes and configured to spray the treatment gas to the edge area of the substrate via the plurality of second gas spraying holes.
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