US 12,142,484 B2
Etching method
Takahiro Yokoyama, Miyagi (JP); Maju Tomura, Miyagi (JP); Yoshihide Kihara, Miyagi (JP); Ryutaro Suda, Miyagi (JP); and Takatoshi Orui, Miyagi (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Feb. 23, 2023, as Appl. No. 18/113,078.
Application 18/113,078 is a division of application No. 17/692,227, filed on Mar. 11, 2022, granted, now 11,615,964.
Application 17/692,227 is a continuation of application No. 17/666,570, filed on Feb. 8, 2022, granted, now 11,551,937, issued on Jan. 10, 2023.
Application 17/666,570 is a continuation of application No. PCT/JP2020/041026, filed on Nov. 2, 2020.
Claims priority of application No. 2019-203326 (JP), filed on Nov. 8, 2019; and application No. 2020-152786 (JP), filed on Sep. 11, 2020.
Prior Publication US 2023/0197458 A1, Jun. 22, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01)
CPC H01L 21/3065 (2013.01) [H01L 21/31116 (2013.01); H01L 21/32137 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A plasma processing apparatus, comprising:
a chamber;
a substrate support to support a substrate in the chamber, the substrate including a silicon-containing film and a mask;
a first gas supply;
a second gas supply;
a plasma generator; and
a controller configured to
control the first gas supply to supply a hydrogen fluoride gas into the chamber,
control the second gas supply to supply a phosphorous gas into the chamber, and
control the plasma generator to generate a plasma from the hydrogen fluoride gas and the phosphorous gas in the chamber to etch the silicon-containing film of the substrate supported by the substrate support.
 
12. An etching method, comprising:
providing a substrate into a chamber, the substrate including a silicon-containing film and a mask;
supplying a hydrogen fluoride gas and a phosphorus gas into the chamber; and
generating a plasma from the hydrogen fluoride gas and the phosphorus gas in the chamber to etch the silicon-containing film of the substrate.