US 12,142,482 B2
Vapor deposition method and vapor deposition device
Naoyuki Wada, Tokyo (JP); and Yu Minamide, Tokyo (JP)
Assigned to SUMCO CORPORATION, Tokyo (JP)
Appl. No. 17/603,056
Filed by SUMCO CORPORATION, Tokyo (JP)
PCT Filed Feb. 7, 2020, PCT No. PCT/JP2020/004793
§ 371(c)(1), (2) Date Oct. 12, 2021,
PCT Pub. No. WO2020/213237, PCT Pub. Date Oct. 22, 2020.
Claims priority of application No. 2019-079124 (JP), filed on Apr. 18, 2019.
Prior Publication US 2022/0199398 A1, Jun. 23, 2022
Int. Cl. H01L 21/02 (2006.01); C23C 16/44 (2006.01); C23C 16/54 (2006.01); H01L 21/67 (2006.01); H01L 21/673 (2006.01)
CPC H01L 21/0262 (2013.01) [C23C 16/4401 (2013.01); C23C 16/54 (2013.01); H01L 21/67201 (2013.01); H01L 21/673 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A vapor deposition method using a vapor deposition device which is provided with a ring-shaped carrier that supports an outer edge of a wafer, and which uses a plurality of the carriers to transport a plurality of before-treatment wafers at least to a susceptor in a reaction chamber in which a CVD film is formed on the wafer, the method comprising:
at a frequency,
removing deposits adhering to the carrier, the reaction chamber, and the susceptor by supplying a cleaning gas into the reaction chamber; and thereafter
forming a polysilicon film on the surface of the susceptor.