US 12,142,479 B2
Formation of SiOCN thin films
Varun Sharma, Helsinki (FI)
Assigned to ASM IP Holding B.V., Almere (NL)
Filed by ASM IP Holding B.V., Almere (NL)
Filed on Jan. 4, 2021, as Appl. No. 17/140,997.
Claims priority of provisional application 62/962,667, filed on Jan. 17, 2020.
Prior Publication US 2021/0225633 A1, Jul. 22, 2021
Int. Cl. H01L 21/31 (2006.01); H01L 21/02 (2006.01); H01L 21/469 (2006.01)
CPC H01L 21/0228 (2013.01) [H01L 21/0214 (2013.01); H01L 21/02315 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of forming a silicon-containing thin film on a substrate in a reaction space by a cyclic vapor deposition process comprising at least one deposition cycle comprising:
contacting the substrate with a vapor phase silicon precursor comprising octachlorotrisiloxane or hexachlorodisiloxane;
contacting the substrate with an amine reactant; and
contacting the substrate with an acyl halide reactant.