CPC H01L 21/02266 (2013.01) [H01L 21/67742 (2013.01); H01L 21/67745 (2013.01)] | 20 Claims |
1. A method of depositing a backside film layer on a backside of a substrate, comprising:
loading the substrate into a factory interface of a cluster tool, the substrate having a front side and the backside, the front side having an active region;
flipping the substrate at the factory interface so that the backside of the substrate is facing up;
transferring the flipped substrate from the factory interface to a physical vapor deposition chamber comprising a magnetron, wherein the magnetron comprises
an inner pole comprising an inner plurality of magnets, the inner pole creating an inner magnetic field; and
an outer pole surrounding the inner pole, the outer pole comprising an outer plurality of magnets concentric with and separate from the inner plurality of magnets, the outer pole creating an outer magnetic field, wherein a strength of the outer magnetic field is different from a strength of the inner magnetic field;
depositing the backside film layer on the backside of the substrate, wherein the backside film layer is deposited using a method comprising physical vapor deposition;
transferring the substrate back from the physical vapor deposition chamber to the factory interface and flipping back the substrate so that the front side of the substrate is facing up; and
unloading the substrate from the factory interface of the cluster tool.
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