US 12,142,477 B2
Chalcogen precursors for deposition of silicon nitride
Chandan Kr Barik, Singapore (SG); Michael Haverty, Mountain View, CA (US); Muthukumar Kaliappan, Fremont, CA (US); Cong Trinh, Santa Clara, CA (US); Bhaskar Jyoti Bhuyan, San Jose, CA (US); John Sudijono, Singapore (SG); Anil Kumar Tummanapelli, Singapore (SG); Richard Ming Wah Wong, Singapore (SG); and Yingqian Chen, Singapore (SG)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US); and National University of Singapore, Singapore (SG)
Filed on Apr. 14, 2023, as Appl. No. 18/134,802.
Application 18/134,802 is a continuation of application No. 17/151,240, filed on Jan. 18, 2021, granted, now 11,658,025.
Prior Publication US 2023/0253201 A1, Aug. 10, 2023
Int. Cl. H01L 21/02 (2006.01); C23C 16/34 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01)
CPC H01L 21/02211 (2013.01) [C23C 16/345 (2013.01); C23C 16/4408 (2013.01); C23C 16/45553 (2013.01); H01L 21/0217 (2013.01); H01L 21/0228 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A method of depositing a film, the method comprising:
exposing a substrate to a chalcogen precursor, the chalcogen precursor substantially free of halogen; and
exposing the substrate to a reactant to form a silicon nitride (SixNy) film on the substrate, wherein the reactant comprises a plasma of one or more of dimethylhydrazine (DMH), alkyl amine, hydrazine, alkyl hydrazine, allyl hydrazine, hydrogen (H2), ammonia (NH3), and nitrous oxide (N2O).